Electron spectrometry with Silicon drift detectors: a GEANT4 based method for detector response reconstruction

Abstract Precision electron spectrometry in the keV range has always been considered a challenging task. The reconstruction of original energy from detected signal is not trivial because multiple effects modify kinetic along its path. If correctly accounted for, these can spoil and bias reconstructed with dramatic reduction accuracy precision. In this paper we address one most critical aspects spectrometry: generally unknown effect detector entrance window. We show that, MonteCarlo-based approach, are able to build model window accurate enough reduce negative due existence. adopt for purpose Silicon Drift Detectors thought primarily used X-ray spectrometry, appear promising device spectrometry. technique discuss exploits characterization validation measurements performed beams Scanning Electron Microscope, later GEANT4 MonteCarlo simulation.